Photoluminescence properties of rare earth doped α-Si3N4

Journal of Luminescence

Volumn 130, Issue 7, 2010, Pages 1147-1153

  Li, Y Q ^a,b   Hirosaki, N ^a   Xie, R J ^a   Takeda, T ^a   Mitomo, M ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NANJING TECH UNIVERSITY   (China)

Author keywords

Silicon nitride; Photoluminescence; Rare earth; Structure; Thermal quenching

Indexed keywords

AMORPHOUS SI; BLUE BAND EMISSION; EMISSION BANDS; GREEN LINE; ISOLATED IONS; PHOTOLUMINESCENCE PROPERTIES; RARE EARTH DOPED; RARE EARTH OXIDE; SINGLE PHASE; SMALL CRYSTALS; STRUCTURAL MODELS; STRUCTURE; THERMAL QUENCHING; THERMAL STABILITY; UV EXCITATION; UV LIGHT;

CALCIUM; CERIUM; CERIUM COMPOUNDS; EUROPIUM; LIGHT; MODEL STRUCTURES; PHOTOLUMINESCENCE; PRASEODYMIUM COMPOUNDS; QUENCHING; RARE EARTHS; RIETVELD METHOD; RIETVELD REFINEMENT; SILICON NITRIDE; SOLID STATE REACTIONS; TERBIUM ALLOYS; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; X RAY POWDER DIFFRACTION;

AMORPHOUS SILICON;

EID: 77950594119     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2010.02.012     Document Type: Article

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