Physical properties of hydrogenated Al-doped ZnO thin layer treated by atmospheric plasma with oxygen gas

Thin Solid Films

Volumn 518, Issue 14, 2010, Pages 4066-4070

  Ahn, K ^a   Jeong, Y S ^a   Lee, H U ^a   Jeong, S Y ^a   Ahn, H S ^b   Kim, H S ^b   Yoon, S G ^c   Cho, C R ^a  

^a Pusan National University   (South Korea)

^b Korea Maritime University   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

Conductivity; Depth profiling; Grain boundary; Hydrogen; Optical properties; Sputtering; Surface energy

Indexed keywords

AL-DOPED ZNO; ATMOSPHERIC PLASMAS; ATMOSPHERIC PRESSURE PLASMAS; AZO FILMS; CONDUCTIVITY; DEPTH ANALYSIS; FILM SURFACES; GLASS SUBSTRATES; HYDROGEN CONCENTRATION; HYDROGEN FLOW RATE; OXYGEN GAS; OXYGEN PLASMAS; RADIO-FREQUENCY-MAGNETRON SPUTTERING; REACTIVE GAS; ROOM TEMPERATURE; SURFACE ENERGIES; THIN INSULATING LAYERS; THIN LAYERS;

ALUMINUM; ATMOSPHERIC PRESSURE; DEPTH PROFILING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HYDROGEN; HYDROGENATION; INTERFACIAL ENERGY; OPTICAL FILMS; OXYGEN; SUBSTRATES; SURFACE CHEMISTRY; SURFACE TENSION; THIN FILMS; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 77950531302     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.028     Document Type: Article

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