Ternary semiconductor compounds CuInS 2 (CIS) thin films synthesized by electrochemical atomic layer deposition (EC-ALD)

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4365-4369

  Lin, Shaoxiong ^a   Shi, Xuezhao ^a   Zhang, Xin ^a   Kou, Huanhuan ^a   Wang, Chunming ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Electrochemical atomic layer deposition; Gold substrate; Underpotential deposition

Indexed keywords

ATOMS; COPPER COMPOUNDS; CYCLIC VOLTAMMETRY; ELECTROCHEMICAL DEPOSITION; ENAMELS; ENERGY GAP; FIELD EMISSION MICROSCOPES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FOURIER TRANSFORM INFRA RED (FTIR) SPECTROSCOPY; GOLD SUBSTRATES; PREFERRED ORIENTATIONS; SEMICONDUCTOR BAND GAP; SEMICONDUCTOR COMPOUNDS; TERNARY SEMICONDUCTORS; UNDERPOTENTIAL DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 77950520382     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.02.032     Document Type: Article

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