The NMR parameters of the SiC-doped BN nanotubes: A DFT study

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 42, Issue 7, 2010, Pages 1954-1957

  Mirzaei, Mahmoud ^a  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Boron nitride nanotube; Chemical shielding; Doping; Silicon carbon

Indexed keywords

BAND GAPS; BN NANOTUBE; BORON NITRIDE NANOTUBES; C ATOMS; CHEMICAL SHIELDING; DFT STUDY; DOPING; DOPING PROCESS; SI ATOMS;

ATOMS; BORON; BORON NITRIDE; CARBON NANOTUBES; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; NITRIDES; NUCLEAR MAGNETIC RESONANCE; SHIELDING; SILICON; SILICON CARBIDE;

CRYSTAL ATOMIC STRUCTURE;

EID: 77950518313     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.03.015     Document Type: Article

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