Measurement of composition profiles in III-nitrides by quantitative scanning transmission electron microscopy

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Rosenauer, A ^a   Gries, K ^a   Muller K ^a   Schowalter, M ^a   Pretorius, A ^a   Avramescu, A ^b   Engl, K ^b   Lutgen, S ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING ELECTRON MICROSCOPY;

COMPOSITION PROFILE; DELOCALIZATION EFFECTS; INSTRUMENTAL RESOLUTION; LATTICE APPROXIMATIONS; QUANTITATIVE MEASUREMENT; QUANTITATIVE METHOD; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STATISTICAL PARAMETER ESTIMATIONS;

TRANSMISSION ELECTRON MICROSCOPY;

EID: 77950513936     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012009     Document Type: Conference Paper

References (5)

1. LeBeau JM, Stemmer S 2008 Ultramicroscopy 108 1653
2. Grillo V, Carlino E and Glas F 2008 Phys. Rev. B 77 054103
3. Rosenauer A, Schowalter M, Titantah JT, Lamoen D 2008 Ultramicroscopy 108 1504
4. Rosenauer A, Schowalter M 2007 Springer Proceedings Phys. 120 169
5. Rosenauer A, Gries K, Müller K, Schowalter M, Avramescu A, Engl K and Lutgen S Ultramicroscopy submitted to