Effect of the metal-semiconductor phase transition on the rate of hydrogen penetration into vanadium dioxide thin films

Physics of the Solid State

Volumn 52, Issue 3, 2010, Pages 605-611

  Andreev, V N ^a   Klimov, V A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 77950508430     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063783410030236     Document Type: Article

References (15)

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