Device characterization of CdSe/poly[2-methoxy-5-(2′-ethylhexyloxy)- 1,4-(1-cyanovinylene)phenylene] nanocomposite infrared photodetectors deposited via matrix assisted pulsed laser evaporation on GaAs

Materials Research Society Symposium Proceedings

Volumn 1114, Issue , 2008, Pages 144-149

  Lantz, Kevin R ^a   Pate, Ryan ^a   Stiff Roberts, Adrienne D ^a  

^a Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; CASTING; DROPS; EVAPORATION; GALLIUM ARSENIDE; HYBRID MATERIALS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; INFRARED DETECTORS; MORPHOLOGY; NANOCOMPOSITE FILMS; NANOCOMPOSITES; PHOTODETECTORS; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM;

DARK CURRENT-VOLTAGE; DEVICE CHARACTERIZATION; HYBRID NANOCOMPOSITES; INFRARED PHOTODETECTOR; INTERNAL MORPHOLOGY; INTRABAND TRANSITIONS; MAPLE DEPOSITIONS; MATRIX ASSISTED PULSED LASER EVAPORATION;

PULSED LASERS;

EID: 77950481751     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1114-g08-07     Document Type: Conference Paper

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