Advantages of low beam energies in a TEM for valence EELS

Journal of Physics: Conference Series

Volumn 209, Issue , 2010, Pages

  Stoger Pollach M ^a   Pongratz, P ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRONS; ENERGY DISSIPATION; ENERGY GAP; OPTICAL PROPERTIES; REFRACTIVE INDEX; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC PROPERTIES OF SEMICONDUCTORS; ELECTRON ENERGY-LOSS SPECTROMETRY; INCIDENT ELECTRONS; INTERFACE PLASMONS; OPERATION VOLTAGE; QUANTUM STRUCTURE; RELATIVISTIC ENERGY; TRANSMISSION ELECTRON;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 77950480412     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/209/1/012031     Document Type: Conference Paper

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