Effect of vacancy defects on electronic properties and activation of sphalerite (110) surface by first-principles

Transactions of Nonferrous Metals Society of China (English Edition)

Volumn 20, Issue 3, 2010, Pages 502-506

  CHEN, Jian hua ^a   CHEN, Ye ^a   LI, Yu qiong ^a  

^a GUANGXI UNIVERSITY   (China)

Author keywords

copper activation; Density Functional Theory calculations; sphalerite; vacancy defect

Indexed keywords

BAND GAPS; COPPER ACTIVATION; CU ATOMS; DENSITY FUNCTIONAL THEORY CALCULATIONS; FIRST-PRINCIPLES; SURFACE STATE; VACANCY DEFECTS; ZN ATOMS;

COPPER; DEFECT DENSITY; DENSITY FUNCTIONAL THEORY; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC PROPERTIES; SUBSTITUTION REACTIONS; SURFACE DEFECTS; SURFACE STRUCTURE; ZINC; ZINC SULFIDE;

VACANCIES;

EID: 77950235006     PISSN: 10036326     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1003-6326(09)60169-2     Document Type: Article

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