Sub-band-gap-excited luminescence of localized states in SiO2-Si and SiO2-Al glasses

Journal of Non-Crystalline Solids

Volumn 356, Issue 20-22, 2010, Pages 982-986

  Trukhin, A N ^a   Sharakovski, A ^a   Grube, J ^a   Griscom, D L ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b ImpactGlass Research International   (United States)

Author keywords

Aluminosilicates; Laser matter interactions; Luminescence; Optical properties; Oxide glasses; Radiation; Silica

Indexed keywords

ALKALI ION; ARF EXCIMER LASER; BRIDGING OXYGEN; DECAY TIME; ELECTRON-HOLE RECOMBINATION; ELECTRONIC PROCESS; EMISSION BANDS; EXPONENTIAL DECAYS; LASER INDUCED; LASER-MATTER INTERACTIONS; LOCALIZED STATE; LUMINESCENCE INTENSITY; LUMINESCENCE PROPERTIES; NONEXPONENTIAL DECAYS; OXIDE GLASS; OXIDE GLASSES; OXYGEN DEFICIENCY; OXYGEN DEFICIENT CENTERS; PURE SILICA; RECOMBINATION LUMINESCENCE; SELF-TRAPPED HOLES; SILICA GLASS; SILICON CENTERS; SUB-BANDS; THERMALLY ACTIVATED; UV BANDS; UV EMISSIONS;

ALUMINOSILICATES; ALUMINUM; DECAY (ORGANIC); EXCIMER LASERS; FUSED SILICA; GAS LASERS; GLASS; GLASS LASERS; LASER EXCITATION; LEAKAGE (FLUID); OPTICAL PROPERTIES; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

LUMINESCENCE;

EID: 77950187282     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.01.027     Document Type: Article

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