Design and investigation of frequency capability of 15kV 4H-SiC IGBT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2009, Pages 271-274

  Sung, Woongje ^a   Wang, Jun ^a   Huang, Alex Q ^a   Baliga, B Jayant ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS DOPING; BUFFER REGION; CURRENT ENHANCEMENT LAYERS; DRIFT REGIONS; FORWARD VOLTAGE DROPS; FREQUENCY CAPABILITY; N-CHANNEL; POWER MOSFETS; POWER-LOSSES; SUBSTRATE DOPING; SWITCHING POWER LOSS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

ACTIVE FILTERS;

EID: 77949985350     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2009.5158054     Document Type: Conference Paper

References (10)

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