Hexagonal SiGe quantum dots and nanorings on Si(110)

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Lee, C H ^a   Liu, C W ^a,b   Chang, H T ^c   Lee, S W ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; HEXAGONAL SHAPES; IN-SITU ANNEALING; LATTICE SYMMETRY; OUT-DIFFUSION; QUANTUM DOT; QUANTUM DOTS; SI LAYER; SI(1 0 0); SI(110); SLOW DIFFUSION;

GERMANIUM; NANORINGS; NANOSTRUCTURED MATERIALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SILICON ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 77949750881     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309773     Document Type: Article

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