Enhancement of the light-extraction efficiency of gan-based light emitting diodes using graded-refractive-index layer by SiO2 nanosphere lithography

Journal of the Electrochemical Society

Volumn 157, Issue 4, 2010, Pages

  Kim, Byung Jae ^a   Bang, Joona ^a   Kim, Sung Hyun ^a   Kim, Jihyun ^a  

^a Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BENZOCYCLOBUTENE; BLUE LIGHT-EMITTING; ELECTROLUMINESCENCE INTENSITY; GAN BASED LED; GAN LAYERS; INDIUM TIN OXIDE LAYERS; INJECTION CURRENTS; LIGHT-EXTRACTION EFFICIENCY; NANO SPHERE LITHOGRAPHY; PHOTOLUMINESCENCE INTENSITIES; POROUS STRUCTURES; TOTAL INTERNAL REFLECTIONS;

BUTENES; EXTRACTION; GALLIUM NITRIDE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOSPHERES; ORGANIC LIGHT EMITTING DIODES (OLED); REFRACTIVE INDEX; SILICON COMPOUNDS; TIN; TITANIUM COMPOUNDS;

GALLIUM ALLOYS;

EID: 77949711920     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3299327     Document Type: Article

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