Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1233-1239

  Matuchova, M ^a   Zdansky, K ^b   Zavadil, J ^b   Tonn, J ^c   Abdul Gader Jafar, Mousa M ^d   Danilewsky, A N ^c   Croll A ^c   Maixner, J ^a  

^a INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

^b INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^c UNIVERSITY OF FREIBURG   (Germany)

^d UNIVERSITY OF JORDAN   (Jordan)

Author keywords

A1. Characterization; A1. Doping; A1. Purification; A1. X ray topography; A2. Bridgman technique; B2. Semiconducting material

Indexed keywords

A1. CHARACTERIZATION; A2. BRIDGMAN TECHNIQUE; BRIDGMAN TECHNIQUES; SEMICONDUCTING MATERIALS; X-RAY TOPOGRAPHY;

CHEMICAL DETECTION; CRYSTAL STRUCTURE; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON DIFFRACTION; GERMANIUM; GOLD; HOLMIUM; IODINE; LIGHT TRANSMISSION; PURIFICATION; STOICHIOMETRY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SILVER;

EID: 77949640053     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.034     Document Type: Article

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