Crystal growth and characterization of LuAG:Ce:Tb scintillator

Journal of Crystal Growth

Volumn 312, Issue 8, 2010, Pages 1244-1248

  Zhuravleva, M ^a,b   Yang, K ^a   Spurrier Koschan, M ^a   Szupryczynski, P ^a,c   Yoshikawa, A ^b   Melcher, C L ^a  

^a UNIVERSITY OF TENNESSEE   (United States)

^b TOHOKU UNIVERSITY   (Japan)

^c SIEMENS CORPORATE RESEARCH   (United States)

Author keywords

A1. Doping; A2. Growth from melt; B1. Oxides; B2. Scintillator materials

Indexed keywords

A1. DOPING; CO-DOPED; CRYSTALLOGRAPHIC PROPERTIES; CZOCHRALSKI TECHNIQUE; GROWN CRYSTALS; GROWTH DEFECTS; GROWTH FROM MELTS; LUMINESCENCE PROCESS; LUMINESCENCE PROPERTIES; MICRO-PULLING-DOWN; MICRO-PULLING-DOWN METHOD; NONUNIFORMITY; PHASE HOMOGENEITY; RADIAL DIRECTION; ROOM TEMPERATURE; SCINTILLATOR MATERIALS;

CERIUM; CERIUM COMPOUNDS; DOPING (ADDITIVES); ENERGY TRANSFER; GAMMA RAYS; GRAIN BOUNDARIES; LUMINESCENCE; SCINTILLATION; TERBIUM ALLOYS;

SINGLE CRYSTALS;

EID: 77949583199     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.021     Document Type: Article

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