Direct growth of nanowire logic gates and photovoltaic devices

Nano Letters

Volumn 10, Issue 3, 2010, Pages 1050-1054

  Kim, Dong Rip ^a   Lee, Chi Hwan ^a   Zheng, Xiaolin ^a  

^a Stanford University   (United States)

Author keywords

Direct growth of nanowire devices; Epitaxial growth; Logic gates; Nanowires; Photovoltaics

Indexed keywords

BUILDING BLOCKES; CLOSE PROXIMITY; CRITICAL CHALLENGES; DIRECT GROWTH; ELECTRODE DESIGN; FUNCTIONAL DEVICES; LARGE SCALE INTEGRATED SYSTEMS; NANOWIRE DEVICES; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; PHYSICAL AND CHEMICAL PROPERTIES; POWER OUT PUT; RECTIFYING BEHAVIORS; SYNTHESIS CONDITIONS;

CHEMICAL PROPERTIES; DISTILLATION; LOGIC GATES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS;

NANOWIRES;

NANOTUBE;

ARTICLE; CHEMISTRY; EVALUATION; INSTRUMENTATION; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; POWER SUPPLY; SIGNAL PROCESSING; ULTRASTRUCTURE;

ELECTRIC POWER SUPPLIES; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOTOCHEMISTRY; SIGNAL PROCESSING, COMPUTER-ASSISTED;

EID: 77949480681     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100011z     Document Type: Article

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