A highly integrated high-voltage bi-directional switch

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Solomon, Adane ^a   Castellazzi, Alberto ^a   Hoyland, Ruth ^a   Agyakwa, Pearl ^a   Li, Jianfeng ^a   Johnson, C Mark ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949393581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378177     Document Type: Conference Paper

References (4)

1. M. Mermet-Guyennet, "New structure of power integrated module", Proc. of the CIPS, June 7-9 2006, Naples, Italy.
2. A. Castellazzi, P. Lasserre, M. Mermet-Guyennet, "Bump-technology based vertical integration of silicon power devices", Proc. of ISDRS 2007, College Park, MD, USA, Dec. 12-14, 2007.
3. http://www.simulia.com/products/abaqus-fea.html
4. P. Wheeler, X. Lie, L. Xu, Y. Meng, L. Empringham, C. Klumpner, J. Clare, "A review of multi-level matrix converter topologies", Proc. of the 4th lET Conf. on Power Electronics, Machines & Drives (PEMD), 2008, pp. 286-290.