Small-sized optical gate switch using Ge2Sb2Te 5 phase-change material integrated with silicon waveguide

Electronics Letters

Volumn 46, Issue 5, 2010, Pages 368-369

  Ikuma, Y ^a   Shoji, Y ^b   Kuwahara, M ^b   Wang, X ^b   Kintaka, K ^b   Kawashima, H ^b   Tanaka, D ^a   Tsuda, H ^a  

^a KEIO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; AMORPHOUS STATE; CRYSTALLINE STATE; EXTINCTION RATIOS; LASER PULSE IRRADIATION; OPTICAL GATES; SILICON WAVEGUIDE; WAVELENGTH RANGES;

CRYSTALLINE MATERIALS; ELECTRIC SWITCHES; GERMANIUM; PULSED LASER APPLICATIONS; TELLURIUM COMPOUNDS; WAVEGUIDES;

GATES (TRANSISTOR);

EID: 77949390577     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.3588     Document Type: Article

References (5)

1. Tsuda, H.: ' Proposal of an optical switch using phase-change material for future photonic network nodes ', 19th, Symp. on Phase Change Optical Information Storage (PCOS), Atami, Japan, November, 2007, p. 39-42
2. Ikuma, Y., Saiki, T., and Tsuda, H.: ' Proposal of a small self-holding 2x2 optical switch using phase-change material ', IEICE Electron. Express, 2008, 5, (12), p. 442-445
3. Strand, D., Tsu, D.V., Miller, R., Hennessey, M., and Jablonski, D.: ' Optical routers based on ovonic phase change materials ', European Phase Change and Ovonics Symposium (E/PCOS), Grenoble, France, May, 2006
4. 5 films ', J. Appl., Phys., 2001, 89, (6), p. 3168-3176 0021-8979
5. 5 films ', J. Appl., Phys., 2000, 88, (2), p. 657-664 0021-8979