AlInN/ GaN heterostructure field-effect transistors

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Yang, Jinwey ^a   Hu, Xuhong ^a   Deng, Jianyu ^a   Gaska, Remis ^a   Shur, Michael ^b   Simin, Grigory ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949376155     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378095     Document Type: Conference Paper

References (1)

1. Q. Fareed, R. Gaska and M. S. Shur, Methods of Growing Nitride-Based Film Using Varying Pulses, US Patent 7192849, March 20 (2007)