Temperature dependence of carrier traps in high sensitivity HARP photoconductive film

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 1, 2009, Pages

  Ohkawa, Yuji ^a,b   Miyakawa, Kazunori ^a   Matsubara, Tomoki ^a   Kikuchi, Kenji ^a   Suzuki, Shirou ^a   Kubota, Misao ^a   Egami, Norifumi ^a   Kobayashi, Akira ^c  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

^c CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SELENIUM; AVALANCHE MULTIPLICATION; AVALANCHE MULTIPLICATION FACTOR; CARRIER TRAPS; CURRENT CHARACTERISTIC; ENERGY RELEASE; HIGH RELIABILITY; HIGH SENSITIVITY; HIGH TEMPERATURE; HIGH-GAIN AVALANCHE RUSHING AMORPHOUS PHOTOCONDUCTORS; INCIDENT LIGHT; INTERNAL ELECTRIC FIELDS; SCIENCE PROGRAMS; SPOT LIGHT; TEMPERATURE DEPENDENCE; TRAPPED ELECTRONS;

DEFECTS; ELECTRIC FIELDS; ELECTRON TRAPS; PHOTOCONDUCTING MATERIALS; PHOTOCONDUCTIVITY; SELENIUM; SEMICONDUCTING SELENIUM COMPOUNDS; TEMPERATURE DISTRIBUTION; THICK FILMS;

AMORPHOUS FILMS;

EID: 77949366801     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200881330     Document Type: Article

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