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Volumn 382, Issue 1 PART 3, 2009, Pages 36-41

Investigating the dielectric property of abnormal grain growth hexagonal BaTiO3

Author keywords

Abnormal grain growth (AGG); Evanescent microwave microscope scanning probe technology (EMP); Ga doping BaTiO 3; Hexagonal BaTiO3; Qxf value

Indexed keywords

ABNORMAL GRAIN GROWTH; ABNORMAL GROWTH; EVANESCENT MICROWAVES; HEXAGONAL STRUCTURES; K-VALUE; NORMAL GROWTH; ROOM TEMPERATURE; SINTERING TEMPERATURES;

EID: 77949278389     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902881496     Document Type: Conference Paper
Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.