Theoretical investigation of anisotropic gain mechanisms in InGaAsP-based 1.5-μm quantum dash lasers

IEEE Journal of Quantum Electronics

Volumn 46, Issue 5, 2010, Pages 742-753

  Healy, Sorcha B ^a   O'Reilly, Eoin P ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

1.55 m; Lasers; Quantum dashes

Indexed keywords

AREA DENSITY; BAND EDGE; CONDUCTION BAND OFFSET; DEGREE OF ANISOTROPY; ELECTRON STATE; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; INGAASP; MODAL GAIN; QUANTUM DASHES; QUANTUM WELL DEVICE; THEORETICAL INVESTIGATIONS; THRESHOLD CARRIER; VALENCE BAND DOS; VALENCE-BAND DENSITIES;

ANISOTROPY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; OPTICAL PROPERTIES; QUANTUM WELL LASERS;

QUANTUM DASH LASERS;

EID: 77749322596     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2037338     Document Type: Article

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