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Volumn 344, Issue 2, 2010, Pages 451-459

A comparison between physically and chemically driven etching in the oxidation of graphite surfaces

Author keywords

Etching; Graphite; Oxidation; Plasma; Scanning tunneling microscopy

Indexed keywords

AIR PLASMAS; ATOMIC SCALE; ATOMIC VACANCIES; ATOMIC-SCALE DEFECTS; CARBON MATERIAL; DIELECTRIC BARRIER DISCHARGES; DIFFERENT MECHANISMS; ETCHING MECHANISM; ETCHING SELECTIVITY; GRAPHITE SURFACES; OXIDATIVE TREATMENT; PHYSICAL PROCESS; SCANNING TUNNELING MICROSCOPY (STM); SURFACE MODIFICATION; XPS DATA;

EID: 77649236042     PISSN: 00219797     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcis.2010.01.018     Document Type: Article
Times cited : (39)

References (43)
  • 23
    • 77649237991 scopus 로고    scopus 로고
    • Peng J.M., Donnet J.-B., Wang T.K., and Rebouillat S. (Eds), Dekker, New York (Chapter 3)
    • In: Peng J.M., Donnet J.-B., Wang T.K., and Rebouillat S. (Eds). Carbon Fibers (1998), Dekker, New York (Chapter 3)
    • (1998) Carbon Fibers


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.