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Volumn 344, Issue 2, 2010, Pages 451-459
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A comparison between physically and chemically driven etching in the oxidation of graphite surfaces
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Author keywords
Etching; Graphite; Oxidation; Plasma; Scanning tunneling microscopy
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Indexed keywords
AIR PLASMAS;
ATOMIC SCALE;
ATOMIC VACANCIES;
ATOMIC-SCALE DEFECTS;
CARBON MATERIAL;
DIELECTRIC BARRIER DISCHARGES;
DIFFERENT MECHANISMS;
ETCHING MECHANISM;
ETCHING SELECTIVITY;
GRAPHITE SURFACES;
OXIDATIVE TREATMENT;
PHYSICAL PROCESS;
SCANNING TUNNELING MICROSCOPY (STM);
SURFACE MODIFICATION;
XPS DATA;
ATOMIC SPECTROSCOPY;
ATOMS;
DIELECTRIC DEVICES;
ELECTRIC DISCHARGES;
ETCHING;
GRAPHITE;
ION BOMBARDMENT;
OXIDATION;
OZONE;
PLASMAS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SCANNING;
SCANNING TUNNELING MICROSCOPY;
SURFACE DEFECTS;
SURFACE STRUCTURE;
WIND TUNNELS;
X RAY PHOTOELECTRON SPECTROSCOPY;
CARBON;
GRAPHITE;
OZONE;
ARTICLE;
CONTROLLED STUDY;
ELECTRIC CURRENT;
INTERMETHOD COMPARISON;
MOLECULAR MECHANICS;
OXIDATION REDUCTION REACTION;
PHYSICAL CHEMISTRY;
PRIORITY JOURNAL;
PROCESS TECHNOLOGY;
RAMAN SPECTROMETRY;
SCANNING TUNNELING MICROSCOPY;
SURFACE PROPERTY;
ULTRAVIOLET RADIATION;
X RAY PHOTOELECTRON SPECTROSCOPY;
CHEMISTRY, PHYSICAL;
GRAPHITE;
OXIDATION-REDUCTION;
PARTICLE SIZE;
SURFACE PROPERTIES;
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EID: 77649236042
PISSN: 00219797
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcis.2010.01.018 Document Type: Article |
Times cited : (39)
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References (43)
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