Carbon nanostructure-aSi:H photovoltaic cells with high open-circuit voltage fabricated without dopants

Solid State Communications

Volumn 150, Issue 13-14, 2010, Pages 561-563

  Schriver, M ^a,b   Regan, W ^b   Loster, M ^b   Zettl, A ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Nanostructures; A. Semiconductors; D. Photoconductivity and photovoltaics

Indexed keywords

A-SI:H; A. SEMICONDUCTORS; AMBIENT CONDITIONS; AMORPHOUS SILICON THIN FILMS; BUCKYPAPER; CARBON NANOSTRUCTURES; CARBON NANOTUBE FILMS; ELECTRICAL CONDUCTIVITY; GRAPHENES; HIGH EFFICIENCY; HIGH TRANSPARENCY; HIGH VACUUM; LARGE SURFACE AREA; MULTILAYER FILM DEPOSITION; NANOSTRUCTURED FILMS; PHOTOCONDUCTIVITY AND PHOTOVOLTAICS; PHOTOVOLTAIC APPLICATIONS; PROCESSING STEPS; PRODUCTION TECHNIQUES; TRANSPARENT CONDUCTING OXIDE;

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; CARBON NANOTUBES; ELECTRIC PROPERTIES; FILM PREPARATION; GRAPHENE; GRAPHITE; IONIC LIQUIDS; MULTILAYER FILMS; MULTILAYERS; NANOSTRUCTURES; OPEN CIRCUIT VOLTAGE; PHOTOCONDUCTIVITY; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

AMORPHOUS SILICON;

EID: 77649186036     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.01.013     Document Type: Article

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