Defect-induced strong ferromagnetism in Cr-doped In2 O3 from first-principles theory

Solid State Communications

Volumn 150, Issue 13-14, 2010, Pages 663-665

  Huang, L M ^a   Silvearv, Fredrik ^a   Araújo, C Moysés ^a,b   Ahuja, R ^a,b  

^a UPPSALA UNIVERSITY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

A. Semiconductors; C. Impurities in semiconductors; D. Electronic band structure

Indexed keywords

CR-DOPED; CRIII IONS; DILUTED MAGNETIC OXIDE; ELECTRONIC BAND STRUCTURE; FERROMAGNETIC COUPLING; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES THEORY; FORMATION ENERGIES; GROWTH CONDITIONS; HIGH CURIE TEMPERATURE; HOLE STATE; IMPURITIES IN SEMI CONDUCTORS; INTERSTITIALS; INTRINSIC DEFECTS; MIXED VALENCE STATE; P-TYPE;

BAND STRUCTURE; CHARGE TRANSFER; DEFECTS; FERROMAGNETISM; ION EXCHANGE; OXYGEN; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

CHROMIUM;

EID: 77649175421     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.12.022     Document Type: Article

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