Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices

IEICE Electronics Express

Volumn 7, Issue 4, 2010, Pages 288-294

  Tani, Yuki ^a,b   Kobayashi, Satoshi ^a   Tokumitsu, Eisuke ^b  

^a HOYA CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cadmium selenide; Electroluminescence; Light emitting devices; Quantum dot; Thin film

Indexed keywords

CADMIUM SELENIDES; CARRIER CONFINEMENTS; COLLOIDAL QUANTUM DOTS; ELECTROLUMINESCENCE LIGHTS; ELECTROLUMINESCENT DEVICES; QUANTUM DOT; QUANTUM DOT THIN FILMS; RADIATIVE RECOMBINATION TRANSITIONS; RADIATIVE TRANSITIONS; ROOM TEMPERATURE; TIME-RESOLVED; TRANSIENT PROPERTY;

CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ELECTROOPTICAL DEVICES; LIGHT; LIGHT EMISSION; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; THIN FILM DEVICES; THIN FILMS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77649093949     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.7.288     Document Type: Article

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