Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

Materials Science and Technology Conference and Exhibition 2009, MS and T'09

Volumn 1, Issue , 2009, Pages 219-228

  Shet, Sudhakar ^a,b   Ahn, Kwang Soon ^c   Ravindra, N M ^b   Yan, Yanfa ^a   Deutsch, Todd ^a   Turner, John ^a   Al Jassim, M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c Yeungnam University   (South Korea)

Author keywords

Bandgap reduction; Co doping; Cu incorporation; F doped tin oxide; p type ZnO; Post deposition annealing; Sputtering

Indexed keywords

BAND GAP REDUCTION; BAND GAPS; CO-DOPING; COATED GLASS; FLUORINE-DOPED; GAS AMBIENTS; GAS FLOWRATE; GAS-FLOW RATIO; P TYPE ZNO; P-TYPE ZNO FILM; PHOTOELECTROCHEMICAL RESPONSE; PHOTOELECTROCHEMICALS; POST DEPOSITION ANNEALING; RADIO FREQUENCY SPUTTERING; SUBSTRATE TEMPERATURE; WATER SPLITTING; WELL-ALIGNED; ZNO; ZNO THIN FILM;

AERODYNAMICS; ARGON; COPPER; DOPING (ADDITIVES); ENERGY GAP; FLOW OF GASES; FLUORINE; GALLIUM; LITHIUM COMPOUNDS; METALLIC FILMS; NANORODS; OPTICAL FILMS; OXIDE FILMS; THIN FILMS; TIN; TITANIUM COMPOUNDS;

ZINC OXIDE;

EID: 77649091183     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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