Infrared-sensitive InGaAs-on-Si p-i-n photodetectors exhibiting high-power linearity

IEEE Photonics Technology Letters

Volumn 16, Issue 11, 2004, Pages 2544-2546

  Pauchard, Alexandre ^a   Bitter, Martin ^a   Pan, Zhong ^a   Kristjansson, Sigurgeir ^a   Hodge, Lee A ^a   Williams, Keith J ^b   Tulchinsky, David A ^b   Hummel, Steven G ^c   Lo, Y H ^a  

^a Nova Crystals Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Accent Optical Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; PHOTOCURRENTS; PHOTODIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON WAFERS; THERMAL CONDUCTIVITY OF SOLIDS;

DARK CURRENTS; HIGH POWER LINEARITY; INFRARED SENSITIVE PHOTODETECTORS; OPTICAL RECEIVERS; WAFER BONDING;

INFRARED DETECTORS;

EID: 7744220630     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.835215     Document Type: Article

References (11)

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