Local and global electronic effects in single and double boron-doped carbon nanotubes

Journal of Physical Chemistry C

Volumn 114, Issue 3, 2010, Pages 1528-1533

  Saloni, Julia ^a   Kolodziejczyk, Wojciech ^b   Roszak, Szczepan ^b   Majumdar, D ^a   Hill Jr , Glake ^a   Leszczynski, Jerzy ^a  

^a JACKSON STATE UNIVERSITY   (United States)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ATOM; BORON-DOPED; CARBON MATERIAL; CONJUGATION SYSTEM; DENSITY-FUNCTIONAL CALCULATIONS; DOPING EFFECTS; DRIVING FORCES; ELECTRON DENSITIES; ELECTRONIC EFFECTS; ENERGY COST; FOREIGN ATOMS; HETEROATOMS; IONIC MECHANISMS; LOCAL CHARACTERISTICS; MOLECULAR SURFACES; POSITIVELY CHARGED; STRUCTURAL CHANGE;

ATOMS; BORON; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRON DENSITY MEASUREMENT; ELECTRONIC PROPERTIES; ELECTRONS; ISOMERS; MATERIALS PROPERTIES; SUBSTITUTION REACTIONS;

CARBON NANOTUBES;

EID: 77249121757     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp910625w     Document Type: Article

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