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Volumn 19, Issue 5, 2009, Pages 35-40
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Development toward wafer-scale graphene RF electronics
a a a a b b b b b b b c c d
c
EOC
(United States)
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINA;
ALUMINUM OXIDE;
ATOMIC LAYER DEPOSITION;
CMOS INTEGRATED CIRCUITS;
GATE DIELECTRICS;
GRAPHENE TRANSISTORS;
HALL MOBILITY;
HIGH-K DIELECTRIC;
HOLE MOBILITY;
SILICON CARBIDE;
ATOMIC LAYER DEPOSITED;
DEVICE FABRICATIONS;
ELECTRON CARRIER DENSITY;
EPITAXIAL GRAPHENE;
GATE DIELECTRIC LAYERS;
RF ELECTRONICS;
RF PERFORMANCE;
SOURCE AND DRAINS;
GRAPHENE;
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EID: 77149158169
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.3119525 Document Type: Conference Paper |
Times cited : (5)
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References (13)
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