Defect structure, charge transport mechanisms, and strain effects in Sr4Fe6O12+δ epitaxial thin films

Chemistry of Materials

Volumn 22, Issue 4, 2010, Pages 1452-1461

  Solís, Cecilia ^a,c   Jung, Woochul ^b   Tuller, Harry L ^b   Santiso, José ^a  

^a CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; BAND GAPS; CHARGE TRANSPORT MECHANISMS; DEFECT MODEL; ELECTRICAL CONDUCTIVITY; ELECTRONIC CONDUCTIVITY; ELEVATED TEMPERATURE; EPITAXIAL STRAIN; EPITAXIAL THIN FILMS; EXPERIMENTAL DATA; HOPPING MECHANISM; LAYERED PEROVSKITE; LOW OXYGEN PARTIAL PRESSURE; ORDER OF MAGNITUDE; OXYGEN DEFICIENCY; OXYGEN PARTIAL PRESSURE; P-TYPE; STRAIN EFFECT; STRUCTURE MODULATION; TRANSPORT MECHANISM;

ACTIVATION ENERGY; DEFECTS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; LATTICE MISMATCH; OXIDE MINERALS; OXYGEN; PARTIAL PRESSURE; PEROVSKITE; STRAIN; SUBSTRATES;

EPITAXIAL FILMS;

EID: 77049120336     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm902957r     Document Type: Article

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