Comparative study of the p+ layer created in CdTe films by nitric-phosphoric etching and chemical-deposition methods

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 3, 2010, Pages 404-406

  Vigil, Osvaldo ^a   Ochoa Landín, Ramón ^b,c   Fandiño, Jesús ^d   Cruz Gandarilla, Francisco ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

^c UNIVERSIDAD DE SONORA   (Mexico)

^d UNIVERSIDAD AUTÓNOMA DE LA CIUDAD DE MÉXICO   (Mexico)

Author keywords

A. semiconductors; A. thin films; D. electrical properties

Indexed keywords

A. THIN FILMS; ACID MIXTURES; CDTE; CDTE SOLAR CELLS; COMPARATIVE STUDIES; CONTACT TECHNOLOGIES; DEPOSITION METHODS; ELECTRICAL PROPERTY; ETCHING METHOD; SURFACE FILMS; THERMAL-ANNEALING;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; ETCHING; SEMICONDUCTOR QUANTUM DOTS; SURFACE CHEMISTRY; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 77049083827     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.10.010     Document Type: Article

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