Lithography guided horizontal growth of silicon nanowires for the fabrication of ultrasensitive piezoresistive strain gauges

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1270-1273

  Fernández Regúlez, Marta ^a   Plaza, Jose A ^a   Lora Tamayo, Emilio ^a   Paulo, Alvaro San ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

MEMS; Nanomechanical cantilever sensors; NEMS; Silicon nanowires

Indexed keywords

ACTIVE AREA; FABRICATION PROCESS; NANO ELECTROMECHANICAL SYSTEMS; NANO-MECHANICAL CANTILEVER; NANOMECHANICAL CANTILEVER SENSORS; NANOWIRE ARRAYS; NEUTRAL AXIS; PIEZO-RESISTIVE; PIEZO-RESISTIVE CANTILEVERS; PIEZORESISTIVE PROPERTIES; SILICON NANOWIRES; STRAIN GAUGE; ULTRASENSITIVE; VAPOUR-LIQUID-SOLID MECHANISMS;

ATOMIC FORCE MICROSCOPY; FABRICATION; MECHANICAL PROPERTIES; MEMS; MICROELECTROMECHANICAL DEVICES; NANOCANTILEVERS; SENSORS; STRAIN GAGES;

NANOWIRES;

EID: 76949096154     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.10.050     Document Type: Article

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