Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimization

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 16, Issue 1, 2010, Pages 307-315

  Liow, Tsung Yang ^a   Ang, Kah Wee ^a   Fang, Qing ^a   Song, Jun Feng ^b   Xiong, Yong Zhong ^a   Yu, Ming Bin ^a   Lo, Guo Qiang ^a   Kwong, Dim Lee ^c,d  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b JILIN UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d Republic Polytechnic   (Singapore)

Author keywords

Germanium photodetector; Monolithic integration; Silicon modulator; Silicon photonics

Indexed keywords

10 GB/ S; LOW VOLTAGE OPERATION; LOW-THERMAL-BUDGET; LOW-VOLTAGE; MODULATION EFFICIENCY; MONOLITHIC INTEGRATION; MONOLITHICALLY INTEGRATED; PERFORMANCE OPTIMIZATIONS; RESPONSIVITY; SI-ON-INSULATOR; SILICON MODULATORS; SILICON PHOTONICS;

GERMANIUM; MODULATION; MODULATORS; MONOLITHIC INTEGRATED CIRCUITS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONIC DEVICES;

SILICON;

EID: 76949095893     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2028657     Document Type: Article

References (37)

1. M. Paniccia, A. Liu, N. Izhaky, and A. Barkai, "Integration challenge of silicon photonics with microelectronics," in Proc. 2nd IEEE Int. Conf. Group IV Photon., Sep. 21-23, 2005, pp. 20-22.
2. T. Pinguet, B. Analui, G. Masini, V. Sadagopan, and S. Gloeckner, "40-Gbps monolithically integrated transceivers in CMOS photonics," in Proc. SPIE Silicon Photon. III, 2008, vol.6898, pp. 689805-1-689805-14.
3. A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, "High-speed optical modulation based on carrier depletion in a silicon waveguide," Opt. Exp., vol.15, pp. 660-668, 2007.
4. F. Y. Gardes, G. T. Reed, N. G. Emerson, and C. E. Png, "A sub-micron depletion-type photonic modulator in silicon on insulator," Opt. Exp., vol.13, pp. 8845-8854, 2006.
5. A. Huang, C. Gunn, and G.-A. Li et al, "A 10 Gb/s photonic modulator and WDM MUX/DEMUX integrated with electronics in 0.13 ?m SOI CMOS," in Proc. IEEE Int. Solid-State Circuits Conf. (ISSCC 2006), San Francisco, CA, Feb., pp. 922-929.
6. D.Marris-Morini, L. Vivien, J.M. F́ed́eli, E. Cassan, P. Lyan, and S. Laval, "Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure," Opt. Exp., vol.16, pp. 334-339, 2008.
7. D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, S. Laval, J.-M. F́ed́eli, and J.-F. Damlencourt, "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Exp., vol.14, pp. 10838-10843, 2006.
8. C. K. Tang and G. T. Reed, "Highly efficient optical phase modulator in SOI waveguides," Electron. Lett., vol.31, no.6, pp. 451-452, 1995.
9. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, andM. Lipson, "12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators," Opt. Exp., vol.15, pp. 430-436, 2007.
10. A. Liu, R. Jones, and L. Liao et al, "A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor," Nature, vol.427, no.6975, pp. 615-618, 2004. (Pubitemid 38248476)
11. L. Liao,D. Samara-Rubio, M. Morse, A. Liu, D. Hodge,D. Rubin,U.Keil, and T. Franck, "High speed siliconMach-Zehnder modulator," Opt. Exp., vol.13, pp. 3129-3135, 2005.
12. W. M. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, "Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator," Opt. Exp., vol.15, pp. 17106-17113, 2007.
13. Y. Jiang,W. Jiang, L. Gu, X. Chen, and R. T. Chen, "80-micron interaction length silicon photonic crystal waveguide modulator," Appl. Phys. Lett., vol.87, pp. 221105-221107, 2005.
14. Q. Xu, B. Schmidt, S. Pradhan, andM. Lipson, "Micrometre-scale silicon electro-optic modulator," Nature, vol.435, pp. 325-327, 2005.
15. J. Basak, L. Liao, A. Liu, D. Rubin, Y. Chetrit, H. Nguyen, D. Samara-Rubio, R. Cohen, N. Izhaky, and M. Paniccia, "Developments in gigascale silicon optical modulators using free carrier dispersion mechanisms," Adv. Opt. Technol., vol.2008, pp. 678948-1-678948-10, 2008.
16. S. Luryi, A. Kastalsky, and J. C. Bean, "New infrared detector on a silicon chip," IEEE Trans. Electron Devices, vol.ED-31, no.9, pp. 1135-1139, Sep. 1984.
17. H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, and S. Luryi, "GeSi strained layer superlattice waveguide photodetectors operating near 1.3 ?m," Appl. Phys. Lett., vol.48, pp. 963-965, 1986.
18. F. Y. Huang, X. Zhu, M. O. Tanner, and K. L. Wang, "Normal incidence strained layer superlattice GeSi/Si photodiodes near 1.3 ?m," Appl. Phys. Lett., vol.67, pp. 566-568, 1995.
19. L. Colace, G. Masini, and G. Assanto, "Ge-on-Si approaches to the detection of near-infrared light," IEEE J. Quantum Electron., vol.35, no.12, pp. 1843-1852, Dec. 1999. (Pubitemid 30524825)
20. L. Colace, G. Masini, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, "Metal-semiconductor-metal near infrared light detector based on epitaxial Ge/Si," Appl. Phys. Lett., vol.72, pp. 3175-3177, 1998.
21. G. Masini, L. Colace, G. Assanto, H.-C. Luan, K.Wada, and L. C. Kimerling, "High responsivity near infrared Ge photodetectors integrated on Si," Electron. Lett., vol.35, pp. 1467-1468, 1999.
22. H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, "High-quality Ge epilayers on Si with low threadingdislocation densities," Appl. Phys. Lett., vol.75, pp. 2909-2911, 1999.
23. L. Colace, G. Masini, G. Assanto, H.-C. Luan, K.Wada, and L. C. Kimerling, "Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates," Appl. Phys. Lett., vol.76, pp. 1231-1233, 2000.
24. C. Masini, L. Colace, G. Assanto, L. Hsin-Chiao, and L. C. Kimerling, "High-performance p-i-n Ge on Si photodetectors for the near infrared: From model to demonstration," IEEE Trans. Electron Devices, vol.48, no.6, pp. 1092-1096, Jun. 2001.
25. T. Yin, R. Cohen, M. Morse, G. Sarid, Y. Chetrit, D. Rubin, andM. Paniccia, "31 GHz Ge n-i-p waveguide photodetectors on silicon-on-insulator substrate," Opt. Exp., vol.15, pp. 13965-13971, 2007.
26. G. Dehlinger, S. J. Koester, J. D. Schaub, J. O. Chu, Q. C. Ouyang, and A. Grill, "High-speed germanium-on-SOI lateral PIN photodiodes," IEEE Photon. Technol. Lett., vol.16, no.11, pp. 2547-2549, Nov. 2004.
27. D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, "High performance, waveguide integrated Ge photodetectors," Opt. Exp., vol.15, pp. 3916-3921, 2007.
28. J. Wang, W. Y. Loh, K. T. Chua, H. Zang, Y. Z. Xiong, T. H. Loh, M. B. Yu, S. J. Lee, G.-Q. Lo, and D.-L. Kwong, "Evanescent-coupled Ge pi-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurations," IEEE Electron Device Lett., vol.29, no.5, pp. 445-448, May 2008.
29. L.Vivien,M. Rouvìere, J.-M. F́ed́eli, D. Marris-Morini, J. F.Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, "High speed and high responsivity germanium photodetector integrated in a silicon-on-insulator microwaveguide," Opt. Exp., vol.15, pp. 9843-9848, 2007.
30. K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M. B. Yu, G.-Q. Lo, and D.-L. Kwong, "Novel silicon-carbon (Si:C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors," IEEE Electron Device Lett., vol.29, no.7, pp. 704-707, Jul. 2008.
31. G. Masini, L. Colace, and G. Assanto, "2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 ?m," Appl. Phys. Lett., vol.82, pp. 2524-2526, 2003.
32. L. Colace, G. M. A. Altieri, and G. Assanto, "Waveguide photodetectors for the near-infrared in polycrystalline germanium on silicon," IEEE Photon. Technol. Lett., vol.18, no.9, pp. 1094-1096, May 2006.
33. L. Chen, P.Dong, andM. Lipson, "High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding," Opt. Exp., vol.16, pp. 11513-11518, 2008.
34. R. Soref and B. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron., vol.QE-23, no.1, pp. 123-129, Jan. 1987.
35. S. J. Koester, L. Schares, C. L. Schow, G. Dehlinger, and R. A. John, "Temperature-dependent analysis of Ge-on-SOI photodetectors and receivers," in Proc. 3rd IEEE Int. Conf. Group IV Photon., 2006, pp. 179-181.
36. M. Balbi, V. Sorianello, L. Colace, and G. Assanto, "Analysis of temperature dependence of Ge-on-Si p-i-n photodetectors," Phys. E: Low-Dimensional Syst. Nanostruct., vol.41, no.6, pp. 1086-1089, May 2009.
37. L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, and L. C. Kimerling, "Ge on Si p-i-n photodiodes operating at 10 Gbit/s," Appl. Phys. Lett., vol.88, pp. 101111-1-101111-3, 2006.