Graphene electrodes for n-type organic field-effect transistors

Microelectronic Engineering

Volumn 87, Issue 5-8, 2010, Pages 1120-1122

  Henrichsen, Henrik H ^a   Bøggild, Peter ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

E beam lithography; Graphene; OFET

Indexed keywords

CHANNEL MATERIALS; E-BEAM LITHOGRAPHY; GRAPHENES; MICRO STRUCTURING; MICRO-SCALES; OXIDIZED SILICON WAFERS; SOURCE AND DRAIN ELECTRODES;

ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE; GRAPHITE ELECTRODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; TUNGSTEN;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 76949095164     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.041     Document Type: Article

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