Band-engineered Ge as gain medium for Si-based laser

Optics InfoBase Conference Papers

Volumn , Issue , 2008, Pages

  Sun, Xiaochen ^a   Liu, Jifeng ^a   Kimerling, Lionel C ^a   Michel, Jurgen ^a   Koch, Thomas L ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOPHOTONICS; PHOTOLUMINESCENCE;

BANDGAP TRANSITION; GAIN MEDIUM; MATERIAL GAIN; N-TYPE GE; PHOTOLUMINESCENCE SPECTRUM; SI BASED LASERS;

PHOTONICS;

EID: 76949092983     PISSN: None     EISSN: 21622701     Source Type: Conference Proceeding    
DOI: 10.1364/ipnra.2008.imc5     Document Type: Conference Paper

References (13)

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