Neodymium doping in UV-IR transparent ferroelectric BaMgF4

Journal of Applied Physics

Volumn 107, Issue 3, 2010, Pages

  Villora E G ^a   Molina, P ^b   Lvarez, S ^b   Garcia Santizo J V ^b   Ramirez M O ^b   Shimamura, K ^a   Bausa L E ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY LEVEL; HIGH RESOLUTION; LASER LEVEL; LOW TEMPERATURES; LUMINESCENCE QUANTUM EFFICIENCY; META-STABLE STATE; NEODYMIUM DOPING; OPTICAL SPECTRA; OPTICAL SPECTROSCOPY; POTENTIAL APPLICATIONS; RADIATIVE LIFETIME;

ELECTRON ENERGY LEVELS; FERROELECTRICITY; SEMICONDUCTOR QUANTUM DOTS; SODIUM; SOLID STATE LASERS;

NEODYMIUM;

EID: 76949091376     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3294652     Document Type: Article

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