SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 6, 2010, Pages

Terahertz conductivity of doped silicon calculated using the ensemble Monte Carlo/finite-difference time-domain simulation technique

(3) Willis, K J a Hagness, S C a Knezevic, I a

a University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CHARGE BUILDUP; COMPLEX CONDUCTIVITY; DOPED SILICON; DRUDE MODELS; EXPERIMENTAL DATA; FINITE DIFFERENCE TIME-DOMAIN; FREQUENCY CHARACTERIZATION; GAUSS'S LAW; MAXWELL'S CURL EQUATIONS; MONTE CARLO; MULTI-PHYSICS; NUMERICAL TECHNIQUES; PREDICTIVE TOOLS; TERA HERTZ; TERAHERTZ FREQUENCY RANGE; TIME-DOMAIN SIMULATIONS;

FINITE DIFFERENCE TIME DOMAIN METHOD; MAXWELL EQUATIONS;

DIFFERENCE EQUATIONS;

EID: 76749147520 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3308491 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.