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Volumn 1203, Issue , 2010, Pages 870-874
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Temperature dependence of PECVD grown boron nitride film in MIS structure
a a a a a |
Author keywords
Activation energy; Boron nitride; Capacitance temperature; Freeze out; Surface band bending
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Indexed keywords
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EID: 76749142094
PISSN: 0094243X
EISSN: 15517616
Source Type: Conference Proceeding
DOI: 10.1063/1.3322574 Document Type: Conference Paper |
Times cited : (1)
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References (3)
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