37 mS/μm In0.53Ga0.47as MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2009, Pages 253-254

  Singisetti, Uttam ^a   Wistey, Mark A ^a   Burek, Greg J ^a   Baraskar, Ashish K ^a   Cagnon, Joël ^a   Thibeault, Brian J ^a   Stemmer, Susanne ^a   Gossard, Arthur C ^a   Rodwell, Mark J W ^a   Kim, Eunji ^b   Shin, Byungha ^b   McIntyre, Paul C ^b   Lee, Yong Ju ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Stanford University   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; CHANNEL MATERIALS; CHANNEL THICKNESS; DRAIN-INDUCED BARRIER LOWERING; DRIVE CURRENTS; ELECTRON EFFECTIVE MASS; GATE LENGTH; HIGH ELECTRON VELOCITY; IN-SITU; INALAS; METAL CONTACTS; METAL DEPOSITION; MOS-FET; MOSFETS; RAISED SOURCE/DRAIN; SELF-ALIGNED; SELF-ALIGNED SILICIDES; SHEET RESISTIVITY; SUBTHRESHOLD SLOPE;

CONTACTS (FLUID MECHANICS); DIELECTRIC MATERIALS; ION BOMBARDMENT; ION IMPLANTATION; MOSFET DEVICES; SILICIDES; TRANSCONDUCTANCE;

SEMICONDUCTING INDIUM;

EID: 76549106005     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2009.5354901     Document Type: Conference Paper

References (8)

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3. D.A.J. Moran et al, 37th European Solid State Device Research Conference, 2007. ESSDERC 2007., pp.466-469, 11-13 Sept. 2007.
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5. U.Singisetti et al, physica status solidi (c), In Press.
6. U.Singisetti et al, 21st International Conference on Indium Phosphide and Related Materials, 2009.
7. M.Wistey et al, Electronc Materals Conference 2008, pp Z4, Jun 2008.
8. G.Burek et al, Journal of Crystal Growth, In Press.