Structural metastability and size scalability of phase-controlled HfO 2 formed through Cap-PDA

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 563-575

  Migita, S ^a   Watanabe, Y ^b,d   Ota, H ^a   Nabatame, T ^b,e   Toriumi, A ^a,c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d SEIKO EPSON CORPORATION   (Japan)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; LOW-K DIELECTRIC; MOSFET DEVICES; NITRIDES; OXIDE FILMS; REFRACTORY METAL COMPOUNDS; SILICA; SILICON NITRIDE;

ELECTRODE MATERIAL; EQUIVALENT OXIDE THICKNESS; GATE ELECTRODES; HIGH DIELECTRIC CONSTANTS; KEY MATERIALS; SCALED DEVICES; SIZE SCALABILITIES; STRUCTURAL METASTABILITY;

HAFNIUM OXIDES;

EID: 76549098830     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122116     Document Type: Conference Paper

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