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Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

Hot electron transport and impact ionization in the narrow energy gap InAs1-x Nx alloy

(8) Makarovsky, O a Feu, W H M a Patan A a Eaves, L a Zhuang, Q D b Krier, A b Beanland, R c Airey, R d

a UNIVERSITY OF NOTTINGHAM (United Kingdom)

b LANCASTER UNIVERSITY (United Kingdom)

c UNIVERSITY OF WARWICK (United Kingdom)

d UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED ELECTRIC FIELD; BAND GAP ENERGY; DILUTE NITRIDE ALLOYS; EXPERIMENTAL STUDIES; HOT-ELECTRON TRANSPORT; INAS; NARROW BAND GAP; NARROW GAP; SHARP INCREASE;

ALLOYS; CERIUM ALLOYS; ELECTRIC FIELDS; ELECTRONS; ENERGY GAP; HOT ELECTRONS; NITRIDES; PARTICLE DETECTORS; SEMICONDUCTING INDIUM;

IMPACT IONIZATION;

EID: 76449112196 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3306737 Document Type: Article

Times cited : (8)

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