Scintillation yield of Bi4Ge3O12 (BGO) pixel crystals

Physica B: Condensed Matter

Volumn 405, Issue 6, 2010, Pages 1647-1651

  Drozdowski, Winicjusz ^a   Wojtowicz, Andrzej J ^a   Kaczmarek, SŁawomir M ^b   Berkowski, Marek ^c  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b WEST POMERANIAN UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

BGO; Scintillator; Thermoluminescence; Yield

Indexed keywords

BGO; BGO CRYSTALS; BGO-SCINTILLATORS; CZOCHRALSKI METHODS; GLOW CURVE; LIGHT LOSS; LIGHT OUTPUT; LOW TEMPERATURES; MEASUREMENT GEOMETRY; ROOM TEMPERATURE; SCINTILLATION YIELDS; TIME WINDOWS; TRAP CONCENTRATION; TWO-RAY MODEL; UNIVERSITY OF TECHNOLOGY;

CRYSTALS; GENE EXPRESSION; GERMANIUM; PIXELS; RADIATION DAMAGE; SCINTILLATION; THERMOLUMINESCENCE; WINDOWS;

LIGHT EMISSION;

EID: 76349094906     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.12.061     Document Type: Article

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