Ultrahigh field emission current density from nitrogen-implanted ZnO nanowires

Nanotechnology

Volumn 21, Issue 9, 2010, Pages

  Zhao, Qing ^a   Gao, Jingyun ^a   Zhu, Rui ^a   Cai, Tuocheng ^a   Wang, Sheng ^a   Song, Xuefeng ^a   Liao, Zhimin ^a   Chen, Xihong ^b   Yu, Dapeng ^a  

^a PEKING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; ENHANCED FIELD EMISSION; FIELD EMISSION PROPERTY; HIGH BRIGHTNESS; N-IMPLANTATION; NANO SCALE; NITROGEN-DOPING; TURN-ON FIELD; ULTRAHIGH-FIELDS; ZNO NANOWIRES; N IMPLANTATION; ULTRA-HIGH FIELDS;

FLAT PANEL DISPLAYS; NANOWIRES; NITROGEN; SURFACE DEFECTS; ZINC OXIDE; CURRENT DENSITY; FIELD EMISSION;

FIELD EMISSION; ZINC OXIDE;

EID: 76249110270     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/9/095701     Document Type: Article

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