Nitride-based photodetectors containing quantum wells in tunable electric fields

Journal of Optoelectronics and Advanced Materials

Volumn 11, Issue 9, 2009, Pages 1108-1115

  Korona, K P ^a   Drabinska, A ^a   Borysiuk, J ^b   Caban, P ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Electrical properties; Optical properties; Photodetectors; Quantum wells

Indexed keywords

ELECTRIC FIELDS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT SENSITIVE MATERIALS; NITRIDES; OPTICAL PROPERTIES; OPTICAL PUMPING; PHOTODETECTORS; PHOTONS; PHOTOSENSITIVITY; SEMICONDUCTOR ALLOYS; STRUCTURAL PROPERTIES;

ACTIVE PHOTODETECTORS; ELECTROREFLECTANCE; EXTERNAL VOLTAGES; GAN/ALGAN; NITRIDE NANOSTRUCTURES; NON LINEAR; PHOTOLUMINESCENCE PEAK; PHOTORESPONSES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 76149139437     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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