Tellurium based phase change materials

Journal of Optoelectronics and Advanced Materials

Volumn 11, Issue 12, 2009, Pages 1983-1987

  Velea, A ^a,b,c  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^b Horia Hulubei Foundation   (Romania)

^c UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

Average electronegativity; Glass forming ability; Phase change; Tellurium

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; ELECTRONEGATIVITY; GLASS; INORGANIC COMPOUNDS; MATERIALS PROPERTIES; PHASE CHANGE MEMORY; SWITCHING; TELLURIUM; TELLURIUM COMPOUNDS;

CHEMICAL BONDINGS; CHEMICAL PARAMETERS; COMPUTER MEMORY; GLASS FORMING ABILITY; HIGH RESISTIVITY; PHASE CHANGE; SWITCHING PARAMETERS; SWITCHING PROPERTIES;

PHASE CHANGE MATERIALS;

EID: 75949093563     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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