Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO2

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 523-528

  Antonova, I V ^a   Marin, D V ^a   Volodin, V A ^a,b   Skuratov, V A ^c   Jedrzejewski, J ^d   Balberg, I ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^c JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

Anisotropic heating; Anisotropic strain; High energy ions; Optical and electrical properties; Structure

Indexed keywords

ANISOTROPY; CHEMICAL MODIFICATION; DEFECTS; EXCITATION ENERGY; HEATING; HIGH ENERGY PHYSICS; ION BOMBARDMENT; IONS; NANOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SILICA; STRUCTURE (COMPOSITION);

ANISOTROPIC STRAIN; HIGH-ENERGY IONS; OPTICAL AND ELECTRICAL PROPERTIES; SI NANOCRYSTAL; HEATING ENGINEERING; HIGH ENERGY ION BOMBARDMENT; SILICON NANOCRYSTALS;

ELECTRIC PROPERTIES; ANISOTROPY;

EID: 75849155676     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.523     Document Type: Conference Paper

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