High pressure behavior of Ga-doped LaMnO3: A combined X-ray diffraction and optical spectroscopy study

Journal of Materials Chemistry

Volumn 20, Issue 7, 2010, Pages 1304-1311

  Malavasi, Lorenzo ^a   Baldini, Maria ^b,c   Di Castro, Daniele ^b,d   Nucara, Alessandro ^b   Crichton, Wilson ^e   Mezouar, Mohamed ^e   Blasco, Javier ^f   Postorino, Paolo ^b  

^a UNIVERSITY OF PAVIA   (Italy)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d UNIVERSITY OF ROME TOR VERGATA   (Italy)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^f UNIVERSITY OF ZARAGOZA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GA-DOPED; HIGH-PRESSURE BEHAVIOR; HIGH-PRESSURE PHASIS; INTERMEDIATE CONFIGURATION; JAHN-TELLER; LATTICE PARAMETERS; OCTAHEDRAL DISTORTION; OPTICAL SPECTROSCOPY; PRESSURE RANGES; PRESSURE-INDUCED TRANSITIONS; RAMAN SPECTRA; REPRESENTATIVE COMPOUND; STRUCTURAL EFFECT; STRUCTURAL INSTABILITY; X RAY DATA;

DIFFRACTION; GALLIUM; MANGANESE OXIDE; OXIDE MINERALS; PHASE DIAGRAMS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

PRESSURE EFFECTS;

EID: 75749156194     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b914975a     Document Type: Article

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