Preparation and photoelectrochemical performance of TiO2/Ag2Se interface composite film

Science in China, Series B: Chemistry

Volumn 52, Issue 12, 2009, Pages 2213-2218

  Zhao, Juanjuan ^a   Jiang, Bangtong ^a   Zhang, Shengyi ^a   Niu, Helin ^a   Jin, Baokang ^a   Tian, Yupeng ^a  

^a ANHUI UNIVERSITY   (China)

Author keywords

Measurement; Photoelectrochemistry; Preparation; TiO2 Ag2Se interface composite film

Indexed keywords

ACTIVATED SURFACES; ANATASE CRYSTALS; CHARGE SEPARATIONS; CONDUCTING GLASS; ELECTRON HOLE PAIRS; INTERFACE REACTIONS; LOW TEMPERATURES; NARROW BAND GAP; PHOTO-ELECTROCHEMISTRY; PHOTO-INDUCED; PHOTOCURRENT RESPONSE; PHOTOELECTROCHEMICAL MEASUREMENTS; PHOTOELECTROCHEMICAL PERFORMANCE; PHOTOVOLTAIC PROPERTY; POROUS TIO; PREPARATION; SEM; SMALL PARTICLES; TIO; TIO2/AG2SE INTERFACE COMPOSITE FILM; TITANIUM HYDROXIDES; VISIBLE LIGHT; XRD ANALYSIS;

COMPOSITE FILMS; ELECTROCHEMISTRY; FILM PREPARATION; PHASE INTERFACES; PHOTOSENSITIZERS; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR ENERGY; TITANIUM; TITANIUM DIOXIDE;

SILVER;

EID: 75749138160     PISSN: 10069291     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11426-009-0143-7     Document Type: Article

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