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Volumn 96, Issue 1, 2010, Pages

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DYNAMICS; EXCITATION POWER; EXPERIMENTAL DATA; INGAAS/GAAS; LOW TEMPERATURES; NONRESONANT; QUANTUM DOT; QUANTUM DOT STRUCTURE; QUANTUM WELL; RATE-EQUATION MODELS; RISETIMES; TEMPORAL BEHAVIOR; THREE-LEVEL; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY; TUNNEL INJECTION;

EID: 75749122628     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3280384     Document Type: Article
Times cited : (18)

References (9)
  • 5
    • 77449140111 scopus 로고    scopus 로고
    • Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots
    • OPAPBZ 0078-5466 (to be published).
    • W. Rudno-Rudziński, K. Ryczko, G. Sk, M. Syperek, J. Misiewicz, E. -M. Pavelescu, Ch. Gilfert, and J. P. Reithmeier, " Optical methods used to optimise semiconductor laser structures with tunnel injection from quantum well to InGaAs/GaAs quantum dots.," Opt. Appl. OPAPBZ 0078-5466 (to be published).
    • Opt. Appl.
    • Rudno-Rudziński, W.1    Ryczko, K.2    Sk, G.3    Syperek, M.4    Misiewicz, J.5    Pavelescu, E.-M.6    Gilfert, Ch.7    Reithmeier, J.P.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.